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| SIMOPAC(R) Module BSM 111 AR VDS = 100 V ID = 200 A R DS(on) = 8.5 m q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 111 AR Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-S1013-A2 Symbol Values 100 100 20 200 600 - 55 ... + 150 700 0.18 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot RthJC Vis - - - - Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C Pulsed drain current, TC = 25 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A C W K/W Vac mm - See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 24 03.96 BSM 111 AR Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 130 A Dynamic Characteristics Forward transconductance Values typ. max. Unit V(BR)DSS 100 - 3.0 - 4.0 V VGS(th) 2.1 I DSS - - 50 300 10 7 250 1000 A IGS - 100 nA m - 8.5 RDS(on) VDS 2 x ID x RDS(on) max., ID = 130 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 , VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 50 V, VGS = 10 V ID = 130 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 50 V, VGS = 10 V ID = 130 A, RGS = 3.3 gfs Ciss Coss Crss td (on) tr td (off) tf 60 - - - - - - - 75 10 5 1.8 280 220 220 60 - 13 7.5 2.7 - - - - S nF ns Semiconductor Group 25 BSM 111 AR Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 400 A , VGS = 0 Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 30 V Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 30 V Values typ. max. Unit IS - - - 1.25 400 3.5 200 600 A ISM - VSD - 1.6 V ns - - C - trr Qrr Semiconductor Group 26 BSM 111 AR Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: = 80 s pulse test Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C Tj 150 C Typ. transfer characteristic ID = f (VGS) parameter: = 80 s pulse test, VDS = 25 V Semiconductor Group 27 BSM 111 AR Continuous drain-source current ID = f (TC), parameter: VGS 10 V, T j = 150 C Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C) Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 130 A; VGS = 10 V (spread) Typical capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 28 BSM 111 AR Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 s (spread) Semiconductor Group 29 BSM 111 AR Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDputs = 300 A Semiconductor Group 30 |
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